2SK2070 - NEC

2SK2070 N-Channel MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2070 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2070 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, suc.

Features

• New package intermediate between small-signal and power models
• Can be directly driven by output of 5-V IC
• Low ON resistance RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A 0.8 ±0.1 3.0 MAX. 0.6 ±0.1 0.6 ±0.1 0.6 ±0.1 0.55 ±0.1 1.7 1.7 4.0 MAX. 1.5 G D S EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate Source (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC.