2SK1862, 2SK1863 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1862, 2SK1863 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volta.
•
•
•
•
• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1862, 2SK1863
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1862 2SK1863 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 450 500 ±30 3 12 3 25 150 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1860 |
Panasonic Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1862 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1867 |
Panasonic |
Silicon N-Channel Power F-MOS FET | |
4 | 2SK1869 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1869L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK1869S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK18 |
Toshiba |
Silicon N-Channel Transistor | |
8 | 2SK180 |
Yoshino International |
Power FET | |
9 | 2SK1803 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK1803 |
Panasonic |
Silicon N-Channel MOSFET | |
11 | 2SK1805 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK1805 |
Toshiba |
Field Effect Transistor |