2SK1855 - Inchange Semiconductor

2SK1855 N-Channel MOSFET Transistor

·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID.

Features

in Current VDS=500V; VGS= 0 2SK1855 MIN MAX UNIT 500 V 2.0 4.0 V 0.7 Ω ±100 nA 300 µA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical fiel.