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2SK1817-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 100V 0,08Ω 20A 40W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), un.
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 100V 0,08Ω 20A 40W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 100 20 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK181 |
Yoshino International |
(2SK180 - 2SK183) Power FET |
|
| 2 | 2SK1813 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK1815 |
Fuji Semiconductors |
N-Channel Silicon Power MOSFET |
|
| 4 | 2SK1818-MR |
Fuji Electric |
N-Channel MOSFET |
|
| 5 | 2SK1819 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1819-01MR |
Fuji Electric |
N-Channel MOSFET |
|
| 7 | 2SK18 |
Toshiba |
Silicon N-Channel Transistor |
|
| 8 | 2SK180 |
Yoshino International |
Power FET |
|
| 9 | 2SK1803 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK1803 |
Panasonic |
Silicon N-Channel MOSFET |
|
| 11 | 2SK1805 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 2SK1805 |
Toshiba |
Field Effect Transistor |
|