2SK1488 - Inchange Semiconductor

2SK1488 N-Channel MOSFET Transistor

·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V.

Features

AMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Diode Forward Voltage IF=10A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=5A;RL=40Ω toff Turn-off time 2SK1488 MIN TYP MAX UNIT 500 V 2.0 4.0 V 0.75 1.0 Ω ±100 nA 300 uA 2.0 V 30 90 ns 60 140 ns 35 130 ns 100 300 ns Notice： ISC reserves the rights to.