The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES • Directly driven by ICs having a 5 V power sou.
• Directly driven by ICs having a 5 V power source.
• Low on-state resistance
RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A) RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A)
• Complementary to 2SJ199.
PACKAGE DRAWING (Unit : mm)
4.5 ± 0.1 1.6 ± 0.2
1.5 ± 0.1
0.8 MIN. 2.5 ± 0.1
4.0 ± 0.25
123
0.42 ±0.06 1.5
0.42 0.47 ±0.06 ±0.06
3.0
0.41+
–00..0053
1.Source 2.Drain 3.Gate MARK : NC
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
5 Drain Current (DC) (TC = 25°C)
ID(DC)
±1.0
A
Drain Current (pu.
The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs hav.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1482 |
NEC |
N-Channel MOSFET | |
2 | 2SK1482 |
Renesas |
N-Channel MOSFET | |
3 | 2SK1483 |
NEC |
N-CHANNEL MOS FET | |
4 | 2SK1483 |
Kexin |
MOS Field Effect Transistor | |
5 | 2SK1483C |
Renesas |
N-CHANNEL MOSFET FOR SWITCHING | |
6 | 2SK1484 |
NEC |
N-CHANNEL MOS FET | |
7 | 2SK1486 |
Toshiba Semiconductor |
N-CHANNEL MOS TYPE TRANSISTOR | |
8 | 2SK1486 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1487 |
Toshiba |
Transistor | |
10 | 2SK1487 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1488 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK1488 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |