·Drain Current –ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V .
oltage Drain Current VDS=60V; VGS= 0 VSD Diode Forward Voltage IF=25A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=15A;RL=2Ω toff Turn-off time 2SK1346 MIN TYP MAX UNIT 60 V 1.5 3.5 V 0.04 0.06 Ω ±100 nA 300 uA 1.7 V 80 160 ns 100 200 ns 85 170 ns 165 330 ns Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK134 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1340 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1340 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK1341 |
Renesas |
Silicon N-Channel MOSFET | |
5 | 2SK1341 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK1341 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK1342 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK1342 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1348 |
Toshiba |
Field Effect Transistor | |
10 | 2SK1300 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK1300 |
Renesas |
Silicon N-Channel MOSFET | |
12 | 2SK1301 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |