2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain .
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• Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SK1299(L), 2SK1299(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1290 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL | |
2 | 2SK1292 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
3 | 2SK1293 |
NEC |
MOS Field Effect Power Transistor | |
4 | 2SK1294 |
Renesas |
N-Channel Power MOS FET | |
5 | 2SK1295 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
6 | 2SK1296 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
7 | 2SK1297 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
8 | 2SK1298 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK12996 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK1299L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK1299S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK12 |
Toshiba |
Silicon N-Channel Transistor |