2SK1297 - Hitachi Semiconductor

2SK1297 Silicon N-Channel MOS FET

2SK1297 Silicon N-Channel MOS FET www.DataSheet4U.com November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2..

Features

x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1297 Absolute Maximum Ratings (Ta = 25GC) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www.DataSheet4U.com Channel dissipation Symbol VDSS VGSS ID ID(pulse)
* IDR Pch
* Tch Tstg 2 1 Ratings 60 Unit V V A A A W r20 40 160 40 100 150
  –55 to +15.