SMD Type N-Channel MOSFET 2SK1284-Z MOSFICET Features Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +1.50 0.15 -0.15 3.80 +5.55 0.15 -0.15 + 0.150 .5 0 -0.15 + 0.28.
Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode
+9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1 -0.1
0.50 +0.8 -0.7
Unit: mm
+1.50 0.15 -0.15
3.80
+5.55 0.15 -0.15
+ 0.150 .5 0 -0.15
+ 0.281 .5 0 -0.1
0.80+0.1 -0.1
0.127 m ax
2.3 4 .60 +0.15
-0.15
0.60+ 0.1 - 0.1
+ 0.252 .6 5 -0.1
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Pulsed Drain Current
*
Power dissipation TC=25
TA=25
Ju.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1284 |
NEC |
Power MOSFET | |
2 | 2SK1284 |
Kexin |
MOS Field Effect Power Transistor | |
3 | 2SK128 |
Panasonic Semiconductor |
N-Channel MOSFET | |
4 | 2SK1280 |
Fuji Electric |
N-Channel MOS-FET | |
5 | 2SK1280 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK1282 |
NEC |
N-Channel Power MOSFET | |
7 | 2SK1282-Z |
NEC |
N-Channel Power MOSFET | |
8 | 2SK1283 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
9 | 2SK1285 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
10 | 2SK1286 |
NEC |
MOS FIELD EFFECT POWER TRANSISTOR | |
11 | 2SK1287 |
NEC |
N-Channel MOSFET | |
12 | 2SK1288 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET |