2SK1280 - Inchange Semiconductor

2SK1280 N-Channel MOSFET Transistor

·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS .

Features

Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= 0V; ID=10mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=9A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Diode Forward Voltage IF=18A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=18A;RL=25Ω toff Turn-off time MIN TYP MAX UNIT 500 V 2.1 3.0 4.0 V 0.35 0.50 Ω ±100 nA 500 uA 0.85 1.6 V 150 220 ns 185 270 ns 180 270 ns 630 900 ns Notice： ISC reserves the rights to make changes of the content herein the datashee.