2SK1215 - Hitachi Semiconductor

2SK1215 Silicon N-Channel MOSFET

2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS = –4 V Symbol VDSX* VGSS ID IG Pch Tch Tstg .

Features

V, ID = 10 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VGS(off) |yfs| Ciss Coss Crss PG NF VDS = 10 V, VGS = 0, f = 100 MHz 1. The 2SK1215 is grouped by I DSS as follows. See characteristic curves of 2SK359. 2 Unit: mm 0.425 2.0 ± 0.2 0.1 0.3 +
  – 0.05 0.1 0.16 +
  – 0.06 1.25 ± 0.1 2.1 ± 0.3 0
  – 0.1 0.2 0.9 ± 0.1 0.65 0.65 1.3 ± 0.2 0.425 0.1 0.3 +
  – 0.05 0.1 0.3 +
  – 0.05 Hitachi Code JEDEC EIAJ Weight (reference value) CMPAK — Conforms 0.006 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent.