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2SK1215 |
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| Part Number | 2SK1215 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sourc... |
| Features |
V, ID = 10 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz
VGS(off) |yfs| Ciss Coss Crss PG NF
VDS = 10 V, VGS = 0, f = 100 MHz
1. The 2SK1215 is grouped by I DSS as follows.
See characteristic curves of 2SK359.
2
Unit: mm
0.425
2.0 ± 0.2
0.1 0.3 + – 0.05 0.1 0.16 + – 0.06 1.25 ± 0.1 2.1 ± 0.3 0 – 0.1 0.2 0.9 ± 0.1 0.65 0.65 1.3 ± 0.2 0.425 0.1 0.3 + – 0.05 0.1 0.3 + – 0.05 Hitachi Code JEDEC EIAJ Weight (reference value) CMPAK — Conforms 0.006 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent... |
| Document |
 2SK1215 Data Sheet
PDF 23.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK121 |
Sony |
Silicon N Channel Junction FET |
|
| 2 | 2SK1211 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK1212 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1212-01 |
Fuji |
N-CHANNEL SILICON POWER MOS-FET |
|
| 5 | 2SK1212-01R |
Fuji |
N-CHANNEL SILICON POWER MOS-FET |
|