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2SK1203 |
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| Part Number | 2SK1203 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designe... |
| Features |
0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
VSD
Diode Forward Voltage
IF=6A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=3A;RL=10Ω
toff
Turn-off time
2SK1203
MIN TYP MAX UNIT
900
V
2.0
4.0
V
2.0
3.0
Ω
±10 uA
250
uA
1.0
V
150
ns
165
ns
120
ns
250
ns
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifica... |
| Document |
 2SK1203 Data Sheet
PDF 203.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK1200 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK1201 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK1202 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1204 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK1204 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|