2SK1191 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ± 20 ± 30 ± 120 (Tch 150ºC) (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss t on t off 2.0 13 20 0.021 2500 1200 180 120 0.028 min 60 ± 500 250 4.0 Ratings typ max Unit V nA µA V S Ω.
10
20
30
VDS (V)
VGS (V)
I D (A)
I D — Re (yfs) Characteristics
50 TC =
– 55ºC 25ºC 125ºC VDS = 10V 2
VGS — VDS Characteristics
40
TC — RDS (ON) Characteristics
ID = 15A VGS =10V
Re (yfs) (S)
10 5
RDS (ON) (mΩ)
30
VDS (V)
1 ID = 30A
20
1 0.5 0.3 0.05 0.1 0 0.5 1 5 10 50 5 10
10 ID = 15A 0
20
–50
0
50
100
150
I D (A)
VGS (V)
Tc (ºC)
VDS — Capacitance Characteristics
10000 5000 VGS = 0V f = 1MHz Ciss 20 30
VSD — I DR Characteristics
200 100 50
Safe Operating Area
ID (pulse) max
N) D (O TE S I RD LIM ID max
(Tc = 25ºC)
10 0µ s s
Ta — PD Characteristics
40
Capacita.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1190 |
Sanken electric |
MOSFET | |
2 | 2SK1192 |
Sanken electric |
MOSFET | |
3 | 2SK1194 |
Shindengen Electric Mfg.Co.Ltd |
VR Series Power MOSFET | |
4 | 2SK1195 |
Shindengen Electric Mfg.Co.Ltd |
VR Series Power MOSFET | |
5 | 2SK1198 |
NEC |
N-Channel MOSFET | |
6 | 2SK1199 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK1199 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK11 |
Toshiba |
Silicon N-Channel Transistor | |
9 | 2SK1101-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
10 | 2SK1102-01M |
ETC |
N-CHANNEL SILICON POWER MOS-FET | |
11 | 2SK1102-01MR |
ETC |
N-CHANNEL SILICON POWER MOS-FET | |
12 | 2SK1103 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET |