2SK1190 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ± 20 ± 22 ± 88 (Tch 150ºC) (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss t on t off 2.0 7.3 11 0.04 1300 650 130 60 0.05 min 60 ± 500 250 4.0 Ratings typ max Unit V nA µA V S Ω pF .
24
VDS (V)
VGS (V)
I D (A)
I D — Re (yfs) Characteristics
50 TC =
– 55ºC 25ºC 125ºC VDS = 10V 4
VGS — VDS Characteristics
80
TC — RDS (ON) Characteristics
ID = 12A VGS =10V
Re (yfs) (S)
10 5
3
RDS (ON) (mΩ)
ID = 22A ID = 12A 3 5 10 20
60
VDS (V)
2
40
1 0.5 0.3 0.05 0.1
1
20
0 0.5 1 5 10 50
0
–50
0
50
100
150
I D (A)
VGS (V)
Tc (ºC)
VDS — Capacitance Characteristics
5000 VGS = 0V f = 1MHz 24 20
VSD — I DR Characteristics
100
Safe Operating Area
ID (pulse) max ) N 50 (O ED S IT RD LIM ID max
DC
(Tc = 25ºC)
10 0µ s
Ta — PD Characteristics
35 30
W ith
1m
10
Capa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1191 |
Sanken electric |
MOSFET | |
2 | 2SK1192 |
Sanken electric |
MOSFET | |
3 | 2SK1194 |
Shindengen Electric Mfg.Co.Ltd |
VR Series Power MOSFET | |
4 | 2SK1195 |
Shindengen Electric Mfg.Co.Ltd |
VR Series Power MOSFET | |
5 | 2SK1198 |
NEC |
N-Channel MOSFET | |
6 | 2SK1199 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK1199 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK11 |
Toshiba |
Silicon N-Channel Transistor | |
9 | 2SK1101-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
10 | 2SK1102-01M |
ETC |
N-CHANNEL SILICON POWER MOS-FET | |
11 | 2SK1102-01MR |
ETC |
N-CHANNEL SILICON POWER MOS-FET | |
12 | 2SK1103 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET |