2SK1095 - Hitachi Semiconductor

2SK1095 Silicon N-Channel MOSFET

www.DataSheet4U.com 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 A.

Features

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•
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• Low on-resistance High speed switching Low drive current 4 V gate drive device
  – Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)
* IDR Pch
*
* Tch Tstg Ratings 60 ±20 25 100 25 30 150
  –55 to +150 Unit V V A A A W °C °C ——————————————.