2SK1007 - Inchange Semiconductor

2SK1007 N-Channel MOSFET Transistor

·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VA.

Features

R CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 VSD Forward On-Voltage IS=5A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=10A; RL=25Ω toff Turn-off time 2SK1007 MIN TYP. MAX UNIT 450 V 2.5 3.5 5.0 V 1.1 1.6 Ω ±100 nA 500 uA 1.0 1.5 V 50 80 ns 60 95 ns 50 80 ns 130 200 ns Notice： ISC reserves the ri.