·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 .
Threshold Voltage VDS=0; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 2SK1038 MIN TYP MAX UNIT 400 V 1.0 5.0 V 1.8 Ω ±100 nA 500 uA Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1030 |
Panasonic |
Silicon N-Channel Power F-MOS FET | |
2 | 2SK1030A |
Panasonic |
Silicon N-Channel Power F-MOS FET | |
3 | 2SK1035 |
Panasonic Semiconductor |
SILICON N CHANNEL POWER F MOSFET | |
4 | 2SK1039 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK1006 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
6 | 2SK1006-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
7 | 2SK1007 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK1007-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
9 | 2SK1008 |
INCHANGE |
N-Channel MOSFET | |
10 | 2SK1008-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
11 | 2SK1009 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK1010 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |