2SJ684 - Sanyo Semicon Device

2SJ684 P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1058 2SJ684 www.DataSheet4U.com SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ684 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source V.

Features

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• General-Purpose Switching Device Applications Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse)
*1 Avalanche Current
*2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --45 --180 50 150 --55 to +150 70 --45 Unit V V A A W °C °C mJ A Note :
*1 VDD=--30V, L=50μH, .