Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SJ684 |
Click to view a larger image
| Part Number | 2SJ684 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : ENA1058 2SJ684 www.DataSheet4U.com SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ684 Features • • • General-Purpose Switching Device Applications Low ON-resistan... |
| Features |
• • • General-Purpose Switching Device Applications Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --45 --180 50 150 --55 to +150 70 --45 Unit V V A A W °C °C mJ A Note : *1 VDD=--30V, L=50μH, ... |
| Document |
 2SJ684 Data Sheet
PDF 81.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ680 |
Toshiba |
Silicon P-Channel MOSFET |
|
| 2 | 2SJ681 |
Toshiba |
Silicon P-Channel MOSFET |
|
| 3 | 2SJ6812 |
Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SJ683 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
|
| 5 | 2SJ687 |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|