2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L).
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS =
–10V, ID =
–5A)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
DPAK
–2
4 D
4
1 2 G
3
1 2 S
3
1. Gate 2. Drain 3. Source 4. Drain
2SJ506(L), 2SJ506(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings
–30.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ506 |
Hitachi Semiconductor |
P-Channel MOSFET | |
2 | 2SJ506L |
Hitachi Semiconductor |
P-Channel MOSFET | |
3 | 2SJ50 |
Hitachi Semiconductor |
P-Channel MOSFET | |
4 | 2SJ501 |
Sanyo Semicon Device |
P-Channel MOSFET | |
5 | 2SJ502 |
Sanyo Semicon Device |
P-Channel MOSFET | |
6 | 2SJ503 |
Sanyo Semicon Device |
P-Channel MOSFET | |
7 | 2SJ504 |
Hitachi Semiconductor |
P-Channel MOSFET | |
8 | 2SJ505 |
Hitachi Semiconductor |
P-Channel MOSFET | |
9 | 2SJ505L |
Hitachi Semiconductor |
P-Channel MOSFET | |
10 | 2SJ505S |
Hitachi Semiconductor |
P-Channel MOSFET | |
11 | 2SJ507 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
12 | 2SJ508 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |