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2SJ506S |
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| Part Number | 2SJ506S |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A)... |
| Features |
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK –2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30... |
| Document |
 2SJ506S Data Sheet
PDF 50.82KB |
| Distributor | Stock | Price | Buy |
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