2SJ321 - Hitachi

2SJ321 Silicon P Channel MOS FET

2SJ321 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ321 Absolute .

Features

• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
• Avalanche ratings Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3. Value at .