Ordering number:EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ320] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Ma.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SJ320]
10.0 3.2
4.5 2.8
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25˚C
2.55
2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO :.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ321 |
Hitachi |
Silicon P Channel MOS FET | |
2 | 2SJ324 |
NEC |
P-Channel MOSFET | |
3 | 2SJ325 |
NEC |
P-Channel MOSFET | |
4 | 2SJ325 |
Guangdong Kexin Industrial |
MOS Field Effect Power Transistors | |
5 | 2SJ326 |
NEC |
P-Channel MOSFET | |
6 | 2SJ326-Z |
NEC |
P-Channel MOSFET | |
7 | 2SJ327 |
NEC |
P-Channel MOSFET | |
8 | 2SJ327-Z |
NEC |
P-Channel MOSFET | |
9 | 2SJ327-Z-E1 |
VBsemi |
P-Channel MOSFET | |
10 | 2SJ328 |
NEC |
P-Channel MOSFET | |
11 | 2SJ328-Z |
NEC |
P-Channel MOSFET | |
12 | 2SJ329 |
NEC |
P-Channel MOSFET |