SMD Type MOSFET P Channel MOSFET 2SJ3053DV ■ Features ● Surface Mount Package ● Super High Density Cell Design for Extremely Low RDS(on) ● Exceptional On-resistance and Maximum DC Current Capability ( SOT-23-6 ) 0.4+0.1 -0.1 6 54 1 23 +0.01 -0.01 +0.2 -0.1 +0.21.6 -0.1 +0.22.8 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.11.1 -0.1 1 Drain 4 Source 2 .
● Surface Mount Package
● Super High Density Cell Design
for Extremely Low RDS(on)
● Exceptional On-resistance and Maximum
DC Current Capability
( SOT-23-6 ) 0.4+0.1
-0.1
6 54
1 23
+0.01 -0.01 +0.2 -0.1
+0.21.6 -0.1
+0.22.8 -0.1
0.55
0.4
Unit: mm 0.15 +0.02
-0.02
+0.11.1 -0.1
1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain
0-0.1 +0.10.68
-0.1
■ Absolute Maximum Ratings (Ta = 25°C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (tp=10us) Power Dissipation Thermal Resistancefrom Junction- to-Ambient (Not.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ305 |
Toshiba Semiconductor |
P-Channel MOSFET | |
2 | 2SJ302 |
NEC |
P-Channel MOSFET | |
3 | 2SJ302-Z |
NEC |
SWITCHING P-CHANNEL POWER MOSFET | |
4 | 2SJ302-ZJ |
Kexin |
P-Channel MOSFET | |
5 | 2SJ303 |
NEC |
P-Channel MOSFET | |
6 | 2SJ304 |
Toshiba Semiconductor |
P-Channel MOSFET | |
7 | 2SJ306 |
Sanyo Semicon Device |
P-Channel MOSFET | |
8 | 2SJ307 |
Sanyo Semicon Device |
P-Channel MOSFET | |
9 | 2SJ308 |
Sanyo Semicon Device |
P-Channel MOSFET | |
10 | 2SJ312 |
Toshiba Semiconductor |
P-Channel MOSFET | |
11 | 2SJ313 |
Toshiba Semiconductor |
P-Channel MOSFET | |
12 | 2SJ315 |
Toshiba Semiconductor |
P-Channel MOSFET |