2SJ313 - Toshiba Semiconductor

2SJ313 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S (typ.) z Complementary to 2SK2013 2SJ313 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Gate−sour.

Features

eviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-09-29 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Drain−source breakdown voltage Gate−source cut−off voltage (Note 2) Drain−source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance IGSS V (BR) DSS VGS (OFF) VDS (ON) |Yfs| Ciss Coss Crss VDS = 0, VGS = ±20 V ID =.