SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Collector- Emitter Voltage Collector – Base Voltage Emitter Base Voltage Collector Current – Continuos Base Current Total P.
toff Current [VEB=7Vdc, IC=0]
Voltage BVCBO IEBO
60
* ON CHARACTERISTICS (1):
DC Current Gain [ Ic = 0.5 Adc , VCE = 5.0 Vdc ] [ Ic =3 Adc , VCE =5.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 3Adc , IB = 0.3Adc )
Emitter
–Base Saturation [ Ic =0.5Adc, VCE =5V ]
Voltage
hFE
VCE(sat) VBE(ON)
100 20
Vdc 100 µAdc
Vdc 100 µAdc
200
1 Vdc 1
Vdc
DYNAMIC CHARACTERISTICS : Current Gain
– Bandwidth Product [Ic=0.5Adc,VCE=5Vdc,ftest=1.0 MHz ] Collector Output Capacitance VCB=10V,IE=0,f=1MHz
fT COB
3 70
MHz pF
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD880 |
GME |
NPN Epitaxial Silicon Transistor | |
2 | 2SD880 |
UTC |
NPN Transistor | |
3 | 2SD880 |
INCHANGE |
NPN Transistor | |
4 | 2SD880 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD880 |
Weitron |
NPN Silicon Epitaxial Power Transistor | |
6 | 2SD880 |
TGS |
Transistor | |
7 | 2SD880 |
Toshiba |
Silicon NPN Transistor | |
8 | 2SD880-GR |
MCC |
NPN Silicon Power Transistors | |
9 | 2SD880-Q |
MCC |
NPN Silicon Power Transistors | |
10 | 2SD880-Y |
MCC |
NPN Silicon Power Transistors | |
11 | 2SD880G |
UTC |
NPN Transistor | |
12 | 2SD882 |
NEC |
NPN Silicon Power Transistor |