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2SD880 - GME

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2SD880 NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor FEATURES  Low frequency power amplifier.  Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Vol.

Features


 Low frequency power amplifier.
 Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature Continuous 60 V 7V 3A 1.5 W -55 to +150 ℃ X082 Rev.A www.gmesemi.com 1 Production specification NPN Epitaxial Silicon Transistor 2SD880 ELECTRICAL CHARACTERISTICS Ratings at 25.

The same part from a different manufacturer

Datasheet 2SD880 - SavantIC 2SD880

·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in aud.

Datasheet 2SD880 - UTC 2SD880

The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200(.

Datasheet 2SD880 - TGS 2SD880

It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter C.

Datasheet 2SD880 - Weitron 2SD880

2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Low frequency power .

Datasheet 2SD880 - INCHANGE 2SD880

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(M.

Datasheet 2SD880 - Toshiba 2SD880

SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES : . High DC Current Gai.

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