·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Excellent Safe Operating Area ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR.
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1.0A; VCE= 10V ICBO Collector Cutoff Current VCB= 200V; IE= 0 ICEO Collector Cutoff Current VCE= 200V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 10V hFE-2 DC Current Gain IC= 1A; VCE= 10V MIN MAX UNIT 200 V 1.0 V 1.5 V 0.1 mA 0.5 mA 0.1 mA 40 180 20 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without no.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD650 |
INCHANGE |
NPN Transistor | |
2 | 2SD651 |
INCHANGE |
NPN Transistor | |
3 | 2SD652 |
INCHANGE |
NPN Transistor | |
4 | 2SD655 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
5 | 2SD655 |
SEMTECH |
NPN Silicon Transistor | |
6 | 2SD655 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
7 | 2SD655 |
Renesas |
Silicon NPN Epitaxial Transistor | |
8 | 2SD60 |
INCHANGE |
NPN Transistor | |
9 | 2SD600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor | |
10 | 2SD600 |
INCHANGE |
NPN Transistor | |
11 | 2SD600 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SD600 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |