2SD651 - INCHANGE

2SD651 NPN Transistor

·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO .

Features

NDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 10mA ICBO Collector Cutoff Current VCB=400V; IE=0 ICEO Collector Cutoff Current VCE= 400V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 2V MIN TYP. MAX UNIT 400 V 400 V 5 V 1.6 V 2.0 V 0.1 mA 0.5 mA 10 mA 500 NOTICE： ISC rese.