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·With TO-220C package ·Complement to type 2SB566/566A APPLICATIONS ·For low frequency power amplifier power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD476 VCEO Collector-emitter voltage 2SD476A VEBO IC ICM PC Tj Tstg E.
V IC=1A ; VCE=4V IC=0.5A ; VCE=4V CONDITIONS IC=10µA ; IE=0 www.datasheet4u.com 2SD476 2SD476A SYMBOL V(BR)CBO MIN 70 50 TYP. MAX UNIT V V(BR)CEO Collector-emitter breakdown voltage V 60 5 1.0 1.2 1 35 60 7 200 MHz V V V µA V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency Switching times ton toff tstg Turn-on time Turn-off time Storage time IC=0.5A ; VCC=10.5V IB1=-IB2=0.05 A 0.3 3.0 2.5 µs µs µs hFE-2 classific.
2SD476A - Renesas
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, .
2SD476A - Hitachi Semiconductor
2SD476(K), 2SD476A(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB566(K) and 2SB.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD476 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD476 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD476 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SD476AK |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD476K |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD476N |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2SD470 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD471 |
Micro Electronics |
SILICON TRANSISTOR |
|
| 9 | 2SD471 |
SEMTECH |
NPN Silicon Transistor |
|
| 10 | 2SD471A |
USHA |
Transistors |
|
| 11 | 2SD473 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD478 |
INCHANGE |
NPN Transistor |
|