2SD473 - INCHANGE

2SD473 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(.

Features

registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD473 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-1 DC Current Gain COB Output Capacitance Switching times VCE= 80V; IB= 0 VCB= 100V; IE= 0 VEB= 5V; .