2SD469 - Inchange Semiconductor

2SD469 Silicon NPN Power Transistor

· Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min) ·Collector Power Dissipation ·Pc=100W@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE U.

Features

er Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff current VCB= 150V; IE=0 IEBO Emitter Cut-off current VEB= 8V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V 2SD469 MIN MAX UNIT 110 V 1.0 V 1.5 V 100 μA 0.1 mA 40 80 200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. .