2SD469 Inchange Semiconductor Silicon NPN Power Transistor Datasheet, en stock, prix

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2SD469

Inchange Semiconductor
2SD469
2SD469 2SD469
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Part Number 2SD469
Manufacturer Inchange Semiconductor
Description · Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min) ·Collector Power Dissipation ·Pc=100W@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT...
Features er Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff current VCB= 150V; IE=0 IEBO Emitter Cut-off current VEB= 8V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V 2SD469 MIN MAX UNIT 110 V 1.0 V 1.5 V 100 μA 0.1 mA 40 80 200 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. ...

Document Datasheet 2SD469 Data Sheet
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