·With TO-220C package ·Collector-base voltage: VCBO=150V ·Collector current :IC=5A ·Collector dissipation : PC=40 (TC=25 ) APPLICATIONS www.DataSheet4U.com ·For B/W TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg .
Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA; IE=0 IC=2mA; RBE=: IE=1mA; IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=5V IC=0.5A ; VCE=5V 20 10 MIN 150 70 8 TYP. 2SD362 SYMBOL V(BR)CBO V(BR)CEO www.DataSheet4U.com MAX UNIT V V V V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT 1.0 1.5 20 20 140 V V µA µA MHz hFE classifications N 20-50 R 40-80 O 70-140 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD362 www.DataSheet4U.c.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ ·Minimu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD360 |
ETC |
(2SD359 / 2SD360) NPN Transistor | |
2 | 2SD361 |
ETC |
NPN Transistor | |
3 | 2SD363 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | 2SD365 |
INCHANGE |
NPN Transistor | |
5 | 2SD30 |
Sanyo Semiconductor |
NPN Transistor | |
6 | 2SD310 |
INCHANGE |
NPN Transistor | |
7 | 2SD311 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | 2SD312 |
INCHANGE |
NPN Transistor | |
9 | 2SD313 |
UTC |
NPN Transistor | |
10 | 2SD313 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SD313 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
12 | 2SD313 |
WEITRON |
NPN Silicon Epitaxial Power Transistor |