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Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification 0.33+0.05 –0.02 Unit: mm 0.10+0.05 –0.02 ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO 3 0.15 min. 0.80±0.05 1.20±0.05 (0.40) (0.40) ■ Absolute Maximum .
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
3
0.15 min. 0.80±0.05 1.20±0.05
(0.40) (0.40)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 100 100 15 20 50 100 125 −55 to +125 Unit V V V mA mA mW °C °C
1 : Base 2 : Emitter 3 : C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2620J |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2623 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor |
|
| 3 | 2SD2624 |
Sanyo Semicon Device |
NPN Transistor |
|
| 4 | 2SD2625V9 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 5 | 2SD2625X9 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 6 | 2SD2625Z9 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 7 | 2SD2627 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 8 | 2SD2627LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 9 | 2SD2600 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor |
|
| 10 | 2SD2603 |
FOSHAN BLUE ROCKET |
SILICON NPN TRANSISTOR |
|
| 11 | 2SD2604 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD2606 |
Panasonic |
SILICON NPN DIFFUSED TYPE TRANSISTOR |
|