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Power Transistors 2SD2538 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification I Features • High forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 I Absolute Maximum Ratings TC = 25.
• High forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
φ 3.2±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 60 60 5 4 2 35 2 150 −55 to +150 °C °C Unit V V V A A W
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30 5.08±0.50 1 2 3
1: Base.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2530 |
Panasonic Semiconductor |
Silicon NPN triple diffusion planer type Transistor |
|
| 2 | 2SD2531 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SD2531 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | 2SD2531 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2536 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2537 |
Rohm |
Medium Power Transistor |
|
| 7 | 2SD2539 |
Toshiba Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 8 | 2SD2539 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD2539 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD2500 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD2500 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD2500 |
INCHANGE |
NPN Transistor |
|