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2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 0.7 A, VBH = 4.2 V) • Zener diode included between collector and base.
se in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit BASE RB 3.6 kΩ COLLECTOR ≈ 5 kΩ ≈ 300 Ω EMITTER 1 http://store.iiic.cc/ 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SD2536 Characteristics Collec.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2530 |
Panasonic Semiconductor |
Silicon NPN triple diffusion planer type Transistor |
|
| 2 | 2SD2531 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SD2531 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | 2SD2531 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2537 |
Rohm |
Medium Power Transistor |
|
| 6 | 2SD2538 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD2539 |
Toshiba Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 8 | 2SD2539 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD2539 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD2500 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD2500 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD2500 |
INCHANGE |
NPN Transistor |
|