Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw .
q q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 60 6 10 5 1 40 2.0 150
–55 to +150 Unit V V V A A A W ˚C ˚C
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2524 |
Inchange Semiconductor |
Power Transistor | |
2 | 2SD2525 |
Toshiba |
Silicon NPN Triple Diffused Type Transistor | |
3 | 2SD2526 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
4 | 2SD2527 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
5 | 2SD2500 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
6 | 2SD2500 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SD2500 |
INCHANGE |
NPN Transistor | |
8 | 2SD2504 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor | |
9 | 2SD250A |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
10 | 2SD2530 |
Panasonic Semiconductor |
Silicon NPN triple diffusion planer type Transistor | |
11 | 2SD2531 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | 2SD2531 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |