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2SD2528 |
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| Part Number | 2SD2528 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High foward ... |
| Features |
q q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 60 6 10 5 1 40 2.0 150 –55 to +150 Unit V V V A A A W ˚C ˚C 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO ... |
| Document |
 2SD2528 Data Sheet
PDF 43.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2524 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD2525 |
Toshiba |
Silicon NPN Triple Diffused Type Transistor |
|
| 3 | 2SD2526 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD2527 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2500 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|