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·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Colle.
mitter Breakdown Voltage IC= 1mA ; IB= 0 60 V V(BR CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 80 V V(BR EBO Emitter-Base Breakdown Voltage IE= 50μA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V ; IC= 0 10 μA hFE DC Current Gain IC= 0.5A ; VCE= 5V 100 320 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V 8 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.
2SD2394 - Rohm
2SD2394 Transistors For Power Amplification (60V, 3A) 2SD2394 zStructure NPN Silicon Triple Diffused Planar Transistor .
2SD2394 - SavantIC
·With TO-220F package ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SB1565 PIN.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2390 |
Sanken electric |
Silicon NPN Transistor |
|
| 2 | 2SD2390 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD2390 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2391 |
Rohm |
Medium Power Transistor |
|
| 5 | 2SD2391 |
SeCoS |
NPN Transistor |
|
| 6 | 2SD2395 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 7 | 2SD2395 |
Rohm |
Power Transistor |
|
| 8 | 2SD2395 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD2395 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD2396 |
SeCoS |
NPN Transistor |
|
| 11 | 2SD2396 |
JCET |
NPN Transistor |
|
| 12 | 2SD2396 |
Rohm |
Low Frequency Transistor |
|