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·With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector.
cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V IE=0 VEB=5V; IC=0 IC=7A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 5000 95 55 MIN 150 www.datasheet4u.com 2SD2390 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT TYP. MAX UNIT V 2.5 3.0 100 100 V V µA µA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=7A;RL=10B IB1=- IB2=7mA VCC=70V 0.5 10.0 1.1 µs µs µs hFE Classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 SavantIC Semiconductor Produc.
2SD2390 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 4V).
2SD2390 - Sanken electric
2SD2390 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2391 |
Rohm |
Medium Power Transistor |
|
| 2 | 2SD2391 |
SeCoS |
NPN Transistor |
|
| 3 | 2SD2394 |
Rohm |
Power Transistor |
|
| 4 | 2SD2394 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD2394 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD2395 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 7 | 2SD2395 |
Rohm |
Power Transistor |
|
| 8 | 2SD2395 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD2395 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD2396 |
SeCoS |
NPN Transistor |
|
| 11 | 2SD2396 |
JCET |
NPN Transistor |
|
| 12 | 2SD2396 |
Rohm |
Low Frequency Transistor |
|