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·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base cur.
C=100mA , IB=0 IE=200mA , IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=800V IE=0 IC=1A ; VCE=5V IF=6A 8 MIN 600 5 www.datasheet4u.com 2SD2335 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO hFE VF TYP. MAX UNIT V V 5.0 1.5 10 V V µA 2.0 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD2335 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 .
2SD2335 - INCHANGE
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2331 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD2331 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD2333 |
SavantIC |
Silicon NPN Power Transistor |
|
| 4 | 2SD2333 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2337 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2300 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD2300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD2300 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD2318 |
Rohm |
High-current gain Power Transistor |
|
| 10 | 2SD2318F5 |
Rohm |
Triple Diffused Planar NPN Silicon Transistor |
|
| 11 | 2SD2321 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD2324 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|