2SD2318 - Rohm

2SD2318 High-current gain Power Transistor

High-current gain Power Transistor (60V, 3A) 2SD2318 Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperat.

Features

1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)
Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse PW=100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 60 6 3 4.5 1 15 150 −55 to +150 Unit V V V A A(Pulse) ∗ W W(TC=25°C) °C °C
Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD2318 CPT3 UV TL 2500
Dimensions (Unit : mm) 2.3 0.9 0.75 .