Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings.
• High breakdown voltage and high current (VCEO = 120 V, I C = 25 A)
• Built-in C-E diode
Outline
TO-3P
2
1 1. Base 2. Collector (Flange) 3. Emitter ID
1
2
3
3
2SD2256
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC
* Tj Tstg ID
*
1 1
Ratings 120 120 7 25 35 120 150
–55 to +150 25
Unit V V V A A W °C °C A
Elec.
2SD2256 - INCHANGE
·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2250 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2250 |
INCHANGE |
Silicon NPN Darlington Power Transistor |
|
| 3 | 2SD2251 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD2251 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2252 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SD2253 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2253 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2254 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD2254 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SD2255 |
Panasonic Semiconductor |
Power Transistors |
|
| 11 | 2SD2257 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD2257 |
SavantIC |
SILICON POWER TRANSISTOR |
|