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Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1492 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 20.0±0.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Colle.
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
(TC=25˚C)
Ratings 130 110 5 10 6 70 3.5 150
–55 to +150 Unit V V V A
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
1
2
3
A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP
–3L Package
Internal Connection
C B
E
s Electrical Characteristics
Parameter Collec.
2SD2254 - Panasonic Semiconductor
Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2250 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2250 |
INCHANGE |
Silicon NPN Darlington Power Transistor |
|
| 3 | 2SD2251 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD2251 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2252 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SD2253 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2253 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2255 |
Panasonic Semiconductor |
Power Transistors |
|
| 9 | 2SD2256 |
Hitachi |
Silicon NPN Transistor |
|
| 10 | 2SD2256 |
INCHANGE |
Silicon NPN Darlington Power Transistor |
|
| 11 | 2SD2257 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD2257 |
SavantIC |
SILICON POWER TRANSISTOR |
|