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Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 2.
1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2114K / 2SD2144S FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE FElectrical characteristic curves hFE values are classified as follows : 233 Transistors 2SD2114K / 2SD2144S 234 Transistors 2SD2114K / 2SD2144S FRon measurement circuit 235 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD214 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD2140 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SD2141 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2141 |
Sanken electric |
Silicon NPN Transistor |
|
| 5 | 2SD2142 |
GME |
Silicon NPN Transistor |
|
| 6 | 2SD2142 |
SeCoS Halbleitertechnologie GmbH |
NPN Transistor |
|
| 7 | 2SD2142 |
JinYu |
NPN Transistor |
|
| 8 | 2SD2142 |
Kexin |
NPN Transistors |
|
| 9 | 2SD2142K |
Rohm |
High-gain Amplifier Transistor |
|
| 10 | 2SD2142K |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 11 | 2SD2143 |
Rohm |
Medium Power Transistor |
|
| 12 | 2SD2143 |
INCHANGE |
NPN Transistor |
|