2SD2142K High-gain Amplifier Transistor (30V, 300mA) Parameter VCES Value 30V lOutline SMT3 IC 300mA lFeatures 1)Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2)High input impedance. 2SD2142K SOT-346 lInner circuit Datasheet lApplication High gain amplifier lPackaging specifications Par.
1)Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2)High input impedance. 2SD2142K SOT-346 lInner circuit Datasheet lApplication High gain amplifier lPackaging specifications Part No. Package Package size 2SD2142K SMT3 2928 Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking T146 180 8 3000 R1M www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150730 - Rev.002 2SD21.
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features hFE,。 Darlington connection for a hi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2142 |
GME |
Silicon NPN Transistor | |
2 | 2SD2142 |
SeCoS Halbleitertechnologie GmbH |
NPN Transistor | |
3 | 2SD2142 |
JinYu |
NPN Transistor | |
4 | 2SD2142 |
Kexin |
NPN Transistors | |
5 | 2SD214 |
INCHANGE |
NPN Transistor | |
6 | 2SD2140 |
Inchange Semiconductor |
Power Transistor | |
7 | 2SD2141 |
INCHANGE |
NPN Transistor | |
8 | 2SD2141 |
Sanken electric |
Silicon NPN Transistor | |
9 | 2SD2143 |
Rohm |
Medium Power Transistor | |
10 | 2SD2143 |
INCHANGE |
NPN Transistor | |
11 | 2SD2144 |
Rohm |
High-current Gain Medium Power Transistor | |
12 | 2SD2144S |
Rohm |
High-current Gain Medium Power Transistor |