Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Power Transistors 2SD2137, 2SD2137A (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A 4.2±0.2 10.0±0.2 Unit: mm 5.0±0.1 1.0±0.2.
• High forward current transfer ratio hFE which has satisfactory
linearity
• Low collector to emitter saturation voltage VCE(sat)
• Allowing supply with the radial taping
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base 2SD2137
voltage
2SD2137A
VCBO
60 80
V
Collector to emitter voltage
2SD2137 2SD2137A
VCEO
60 80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VEBO ICP IC PC
Tj Tstg
6 5 3 15 2 150 −55 to +150
V A A W
°C °C
18.0.
2SD2137A - GME
Production specification Power Transistors 2SD2137A FEATURES High Forward Current Transfer Ratio hFE Which Has Sat.
2SD2137A - INCHANGE
·Silicon NPN triple diffusion planar type ·Complementary to 2SB1417A ·Low Collector to Emitter Saturation Voltage ·Minim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2137 |
Panasonic |
Power Transistors |
|
| 2 | 2SD2137 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD213 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2130 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2131 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2132 |
Rohm |
NPN SIlicon Transistor |
|
| 7 | 2SD2133 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD2135 |
Panasonic |
Silicon NPN Power Transistor |
|
| 9 | 2SD2136 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD2136 |
UTC |
NPN SILICON TRANSISTOR |
|
| 11 | 2SD2136 |
SeCoS |
NPN Transistor |
|
| 12 | 2SD2136 |
WEJ |
NPN Transistor |
|